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High Speed PDs for 0.8-2.4 µm spectral range

PhotodiodesFast and ultrafast IR photodiodes for the wavelength range of 1.0-2.4 µm have been developed by IBSG Co., Ltd in collaboration with the laboratory of Infrared optoelectronics of Ioffe Institute. These GaSb/GaInAsSb/GaAlAsSb-based photodiodes have a separated photosensitive pad (50 or 100 µm in diameter) and a contact pad which are connected by bridge-like frontal contact. The main advantage of the GaSb/GaInAsSb/GaAlAsSb heterostructure is high crystalline quality of epitaxial layers with low density of dislocations (104 cm–2). The doping level of the active GaInAsSb layer (up to 1014-1015 sm–3) makes it possible to reach low capacity and high response speed for PDs.

 


High Speed (fast) photodiode PD24-01-HS demonstrates self capacitance as low as 0.5-1.9 pF at a reverse bias of 3.0 V due to low doping level of the active GaInAsSb layer (up to 1014-1015 sm–3). The response speed of the p–i–n photodiodes was studied under conditions of their excitation by radiation pulses of a semiconductor laser operating at λ=1.3 μm with a pulse full width at half maximum (FWHM) of 25 ps. The response speed has a value of τ0.1-0.9=130-150 ps. The bandwidth of photodiodes is 2 GHz

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High Speed (Ultrafast) photodiode PD24-005-HS has self capacitance as low as 0.5-0.9 pF at a reverse bias of 3.0 V due to low doping level of the active GaInAsSb layer (up to 1014-1015 cm–3), as well as unique design of a chip with a separated photosensitive pad (50 or 100 µm in diameter) and a contact pad which are connected by bridge-like frontal contact. The response speed of the p–i–n photodiodes was studied under conditions of their excitation by radiation pulses of a semiconductor laser operating at λ=1.3 μm with a pulse full width at half maximum (FWHM) of 25 ps. Speed of response has a value of τ0.1-0.9=50-100 ps. The bandwidth of photodiodes reaches 5 GHz. Photodiodes exhibit low magnitude of reverse dark current (ID = 200-1500 nА) at reverse bias U=–(0.5-3.0) V, high values of current monochromatic sensitivity SI=1.10-1.15 A/W and specific detection ability D*(λmax,1000,1)=0.9∙1011 cm∙Hz1/2∙W–1 in the spectral interval of 2.0-2.2 µm.

 

PDs 0.8 - 2.4 µm Sensitive Area Diameter (mm) Package Wavelength Range (µm) Detectivity (cm∙Hz1/2∙W–1) Bandwidth (GHz)
Series Model
PD24

PD24-005-HS

0.5 SMA 0.8-2.4 (5-9)∙1010 5

PD24-01-HS

0.1 TO-18 2

PD24-01-HS*

0.1 TO-46 2

 

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PDXX-YYY-HS – High Speed PD model in SMA package
PDXX-YY-HS – High Speed PD model in TO-18 or TO-46 package